50v-600v 2.0a surface mount super fast rectifiers e-mail: sales@taychipst.com web site: www.taychipst.com 1 of 2 es2a thru es2j features ? for surface mount applications. ? glass passivated junction. ? low profile package. ? easy pick and place. ? built-in strain relief. ? superfast recovery times for high e f ficienc y . electrical characteristics t a = 25c unless otherwise noted parameter device units 2a 2b 2c 2d peak repetitive rever s e voltage 50 100 150 200 v ma x i m um rms voltage 35 70 105 140 v dc rever s e vol t ag e (ra t ed v r ) 50 100 150 200 v ma x i m um rever s e current @ rated v r t a = 25 c t a = 100 c 10 350 m a m a m a x i m u m r e v e r s e r e c o v e r y t i me i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a 20 ns ma x i m um for w ard voltage @ 2.0 a 0.90 v typi c al j un c tion capa c itan c e v r = 4.0 v, f = 1.0 mhz 18 pf absolute maximum ratings* t a = 25c unless otherwise noted s y m b ol para m eter value units i o avera g e re c tifie d current .375 " lead length @ t a = 11 0 c 2.0 a i f(surge) peak f or w ard sur g e current 8.3 m s s ingle half - s ine- w ave super i m po s ed on r ated load ( j edec m et h od) 50 a p d total de v ice d issipation dera t e above 2 5 c 1.66 13.3 w m w / c r q ja ther m al re s i s tan c e, j un c tion t o a m bient** 75 c / w r q jl ther m al re s i s tan c e, j un c tion t o lead** 20 c / w t stg stora g e te m perat u re range -50 to +150 c t j oper a ting j un c tion te m peratu r e -50 to +150 c these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. device mounted on fr-4 pcb 0.013 mm.
surface mount super fast rectifiers e-mail: sales@taychipst.com web site: www.taychipst.com 50v-600v 2.0a 2 of 2 es2a thru es2j 0 10 20 30 1 10 100 i , peak for ward surge current (a) fsm number of cycles at 60hz fi g . 3 sur g e current deratin g curve single half-sine-wave (jedec method) 40 50 60 0.1 1.0 10 100 1000 0 40 80 120 i , instantaneous reverse current ( a) r percent of rated peak reverse voltage (%) fi g .4 t y pical reverse characteristics t = 125 c j t = 25 c j 0 0.8 1.6 0 .75 25 50 75 100 125 150 175 i , average for ward current (a) o t , terminal temperature ( c) fi g . 1 forward current deratin g curve t 2.0 0.4 1.2 50v dc approx 50 ni (non-inductive) ? 10 ni ? 1.0 ni ? oscilloscope (note 1) pulse generator (note 2) device under test t rr set time base for 50/100 ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . ? ? fi g . 5 reverse recover y time characteristic and test circuit (+) (+) (-) (-) i , instantaneous for ward current (a) f v , instantaneous forward voltage (v) fi g .2 t y pical forward characteristics f 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 t = 25 c j pulse width = 300 s
|
